Cargando…
Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666037/ https://www.ncbi.nlm.nih.gov/pubmed/29093549 http://dx.doi.org/10.1038/s41598-017-14009-4 |