An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)...

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Detalles Bibliográficos
Autores principales: Yang, Hang, Qin, Shiqiao, Zheng, Xiaoming, Wang, Guang, Tan, Yuan, Peng, Gang, Zhang, Xueao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Brief Report
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/
https://www.ncbi.nlm.nih.gov/pubmed/28937619
http://dx.doi.org/10.3390/nano7100286

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/
https://www.ncbi.nlm.nih.gov/pubmed/28937619
http://dx.doi.org/10.3390/nano7100286

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