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An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/ https://www.ncbi.nlm.nih.gov/pubmed/28937619 http://dx.doi.org/10.3390/nano7100286 |
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author | Yang, Hang Qin, Shiqiao Zheng, Xiaoming Wang, Guang Tan, Yuan Peng, Gang Zhang, Xueao |
author_facet | Yang, Hang Qin, Shiqiao Zheng, Xiaoming Wang, Guang Tan, Yuan Peng, Gang Zhang, Xueao |
author_sort | Yang, Hang |
collection | PubMed |
description | We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al(2)O(3)/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS(2), and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. |
format | Online Article Text |
id | pubmed-5666451 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-56664512017-11-09 An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials Yang, Hang Qin, Shiqiao Zheng, Xiaoming Wang, Guang Tan, Yuan Peng, Gang Zhang, Xueao Nanomaterials (Basel) Brief Report We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al(2)O(3)/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS(2), and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. MDPI 2017-09-22 /pmc/articles/PMC5666451/ /pubmed/28937619 http://dx.doi.org/10.3390/nano7100286 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Brief Report Yang, Hang Qin, Shiqiao Zheng, Xiaoming Wang, Guang Tan, Yuan Peng, Gang Zhang, Xueao An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials |
title | An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials |
title_full | An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials |
title_fullStr | An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials |
title_full_unstemmed | An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials |
title_short | An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials |
title_sort | al(2)o(3) gating substrate for the greater performance of field effect transistors based on two-dimensional materials |
topic | Brief Report |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/ https://www.ncbi.nlm.nih.gov/pubmed/28937619 http://dx.doi.org/10.3390/nano7100286 |
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