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An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)...

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Autores principales: Yang, Hang, Qin, Shiqiao, Zheng, Xiaoming, Wang, Guang, Tan, Yuan, Peng, Gang, Zhang, Xueao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/
https://www.ncbi.nlm.nih.gov/pubmed/28937619
http://dx.doi.org/10.3390/nano7100286
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author Yang, Hang
Qin, Shiqiao
Zheng, Xiaoming
Wang, Guang
Tan, Yuan
Peng, Gang
Zhang, Xueao
author_facet Yang, Hang
Qin, Shiqiao
Zheng, Xiaoming
Wang, Guang
Tan, Yuan
Peng, Gang
Zhang, Xueao
author_sort Yang, Hang
collection PubMed
description We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al(2)O(3)/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS(2), and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.
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spelling pubmed-56664512017-11-09 An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials Yang, Hang Qin, Shiqiao Zheng, Xiaoming Wang, Guang Tan, Yuan Peng, Gang Zhang, Xueao Nanomaterials (Basel) Brief Report We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al(2)O(3)/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS(2), and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. MDPI 2017-09-22 /pmc/articles/PMC5666451/ /pubmed/28937619 http://dx.doi.org/10.3390/nano7100286 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Brief Report
Yang, Hang
Qin, Shiqiao
Zheng, Xiaoming
Wang, Guang
Tan, Yuan
Peng, Gang
Zhang, Xueao
An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
title An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
title_full An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
title_fullStr An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
title_full_unstemmed An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
title_short An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
title_sort al(2)o(3) gating substrate for the greater performance of field effect transistors based on two-dimensional materials
topic Brief Report
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/
https://www.ncbi.nlm.nih.gov/pubmed/28937619
http://dx.doi.org/10.3390/nano7100286
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