Cargando…
An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)...
Autores principales: | Yang, Hang, Qin, Shiqiao, Zheng, Xiaoming, Wang, Guang, Tan, Yuan, Peng, Gang, Zhang, Xueao |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666451/ https://www.ncbi.nlm.nih.gov/pubmed/28937619 http://dx.doi.org/10.3390/nano7100286 |
Ejemplares similares
-
Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al(2)O(3) gate dielectrics on graphene field effect transistors
por: Snure, Michael, et al.
Publicado: (2020) -
Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors
por: Choi, Junhwan, et al.
Publicado: (2023) -
Glyphosate Sensor Based on Nanostructured Water-Gated CuO Field-Effect Transistor
por: Ogurcovs, Andrejs, et al.
Publicado: (2022) -
All-carbon based graphene field effect transistor with graphitic electrodes fabricated by e-beam direct writing on PMMA
por: Chen, Wei, et al.
Publicado: (2015) -
Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect
Transistor to Configure Exclusive-OR Gate
por: Liu, Xueyuan, et al.
Publicado: (2022)