N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

N-doped graphene with low intrinsic defect densities was obtained by combining a solid source doping technique and chemical vapor deposition (CVD). The solid source for N-doping was embedded into the copper substrate by NH(3) plasma immersion. During the treatment, NH(3) plasma radicals not only fla...

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Detalles Bibliográficos
Autores principales: Liu, Bo, Yang, Chia-Ming, Liu, Zhiwei, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666467/
https://www.ncbi.nlm.nih.gov/pubmed/28973982
http://dx.doi.org/10.3390/nano7100302

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666467/
https://www.ncbi.nlm.nih.gov/pubmed/28973982
http://dx.doi.org/10.3390/nano7100302

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