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N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique
N-doped graphene with low intrinsic defect densities was obtained by combining a solid source doping technique and chemical vapor deposition (CVD). The solid source for N-doping was embedded into the copper substrate by NH(3) plasma immersion. During the treatment, NH(3) plasma radicals not only fla...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666467/ https://www.ncbi.nlm.nih.gov/pubmed/28973982 http://dx.doi.org/10.3390/nano7100302 |