Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

The integration of III-V semiconductors on silicon (Si) substrate has been an active field of research for more than 30 years. Various approaches have been investigated, including growth of buffer layers to accommodate the lattice mismatch between the Si substrate and the III-V layer, Si- or Ge-on-i...

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Detalles Bibliográficos
Autores principales: Holland, Martin, van Dal, Mark, Duriez, Blandine, Oxland, Richard, Vellianitis, Georgios, Doornbos, Gerben, Afzalian, Aryan, Chen, Ta-Kun, Hsieh, Chih-Hua, Ramvall, Peter, Vasen, Tim, Yeo, Yee-Chia, Passlack, Matthias
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5676749/
https://www.ncbi.nlm.nih.gov/pubmed/29116157
http://dx.doi.org/10.1038/s41598-017-15025-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5676749/
https://www.ncbi.nlm.nih.gov/pubmed/29116157
http://dx.doi.org/10.1038/s41598-017-15025-0

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