Room-temperature NH(3) sensing of graphene oxide film and its enhanced response on the laser-textured silicon

Electricity-based response to NH(3) of graphene oxide (GO) is demonstrated at ppm level at room temperature. The GO film prepared on planar silicon substrate shows weak response when exposed to 50 ppm NH(3), response time less than 30 s and recovery time about 100 s. More interestingly, the GO film...

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Detalles Bibliográficos
Autores principales: Zhu, Suwan, Sun, Haibin, Liu, Xiaolong, Zhuang, Jun, Zhao, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5676790/
https://www.ncbi.nlm.nih.gov/pubmed/29116161
http://dx.doi.org/10.1038/s41598-017-15270-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5676790/
https://www.ncbi.nlm.nih.gov/pubmed/29116161
http://dx.doi.org/10.1038/s41598-017-15270-3

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