Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

A physically intuitive current injection efficiency model for a GaN:Eu quantum well (QW) has been developed to clarify the necessary means to achieve device quantum efficiency higher than the state-of-the-art GaN:Eu system for red light emission. The identification and analysis of limiting factors f...

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Detalles Bibliográficos
Autores principales: Fragkos, Ioannis E., Tan, Chee-Keong, Dierolf, Volkmar, Fujiwara, Yasufumi, Tansu, Nelson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677028/
https://www.ncbi.nlm.nih.gov/pubmed/29116197
http://dx.doi.org/10.1038/s41598-017-15302-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677028/
https://www.ncbi.nlm.nih.gov/pubmed/29116197
http://dx.doi.org/10.1038/s41598-017-15302-y

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