Application of CMOS Technology to Silicon Photomultiplier Sensors

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processe...

Descripción completa

Detalles Bibliográficos
Autores principales: D’Ascenzo, Nicola, Zhang, Xi, Xie, Qingguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677208/
https://www.ncbi.nlm.nih.gov/pubmed/28946675
http://dx.doi.org/10.3390/s17102204

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677208/
https://www.ncbi.nlm.nih.gov/pubmed/28946675
http://dx.doi.org/10.3390/s17102204

Ejemplares similares