Application of CMOS Technology to Silicon Photomultiplier Sensors

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processe...

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Detalles Bibliográficos
Autores principales: D’Ascenzo, Nicola, Zhang, Xi, Xie, Qingguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677208/
https://www.ncbi.nlm.nih.gov/pubmed/28946675
http://dx.doi.org/10.3390/s17102204
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author D’Ascenzo, Nicola
Zhang, Xi
Xie, Qingguo
author_facet D’Ascenzo, Nicola
Zhang, Xi
Xie, Qingguo
author_sort D’Ascenzo, Nicola
collection PubMed
description We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.
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spelling pubmed-56772082017-11-17 Application of CMOS Technology to Silicon Photomultiplier Sensors D’Ascenzo, Nicola Zhang, Xi Xie, Qingguo Sensors (Basel) Article We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. MDPI 2017-09-25 /pmc/articles/PMC5677208/ /pubmed/28946675 http://dx.doi.org/10.3390/s17102204 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
D’Ascenzo, Nicola
Zhang, Xi
Xie, Qingguo
Application of CMOS Technology to Silicon Photomultiplier Sensors
title Application of CMOS Technology to Silicon Photomultiplier Sensors
title_full Application of CMOS Technology to Silicon Photomultiplier Sensors
title_fullStr Application of CMOS Technology to Silicon Photomultiplier Sensors
title_full_unstemmed Application of CMOS Technology to Silicon Photomultiplier Sensors
title_short Application of CMOS Technology to Silicon Photomultiplier Sensors
title_sort application of cmos technology to silicon photomultiplier sensors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677208/
https://www.ncbi.nlm.nih.gov/pubmed/28946675
http://dx.doi.org/10.3390/s17102204
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