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Application of CMOS Technology to Silicon Photomultiplier Sensors
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processe...
Autores principales: | D’Ascenzo, Nicola, Zhang, Xi, Xie, Qingguo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677208/ https://www.ncbi.nlm.nih.gov/pubmed/28946675 http://dx.doi.org/10.3390/s17102204 |
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