Effect of MgO Underlying Layer on the Growth of GaO(x) Tunnel Barrier in Epitaxial Fe/GaO(x)/(MgO)/Fe Magnetic Tunnel Junction Structure

We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaO(x) tunnel barrier in Fe/GaO(x)/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with the temperature being raised up to 500 °C unde...

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Detalles Bibliográficos
Autores principales: Narayananellore, Sai Krishna, Doko, Naoki, Matsuo, Norihiro, Saito, Hidekazu, Yuasa, Shinji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677435/
https://www.ncbi.nlm.nih.gov/pubmed/29065516
http://dx.doi.org/10.3390/s17102424

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5677435/
https://www.ncbi.nlm.nih.gov/pubmed/29065516
http://dx.doi.org/10.3390/s17102424

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