Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the la...

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Detalles Bibliográficos
Autores principales: Huang, Kai, Jia, Qi, You, Tiangui, Zhang, Runchun, Lin, Jiajie, Zhang, Shibin, Zhou, Min, Zhang, Bo, Yu, Wenjie, Ou, Xin, Wang, Xi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5678072/
https://www.ncbi.nlm.nih.gov/pubmed/29118412
http://dx.doi.org/10.1038/s41598-017-15094-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5678072/
https://www.ncbi.nlm.nih.gov/pubmed/29118412
http://dx.doi.org/10.1038/s41598-017-15094-1

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