Conduction-band effective mass and bandgap of ZnSnN(2) earth-abundant solar absorber

Pseudo III-V nitride ZnSnN(2) is an earth-abundant semiconductor with a high optical absorption coefficient in the solar spectrum. Its bandgap can be tuned by controlling the cation sublattice disorder. Thus, it is a potential candidate for photovoltaic absorber materials. However, its important bas...

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Detalles Bibliográficos
Autores principales: Cao, Xiang, Kawamura, Fumio, Ninomiya, Yoshihiko, Taniguchi, Takashi, Yamada, Naoomi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5678229/
https://www.ncbi.nlm.nih.gov/pubmed/29118322
http://dx.doi.org/10.1038/s41598-017-14850-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5678229/
https://www.ncbi.nlm.nih.gov/pubmed/29118322
http://dx.doi.org/10.1038/s41598-017-14850-7

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