A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO(2)/Si structure

In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO(2)/Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO(2), which has a resistivity in the range of 50–80 Ω∙cm. The I–V curve obtained in dark...

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Detalles Bibliográficos
Autores principales: Lu, Jing, Tu, Xinglong, Yin, Guilin, Wang, Hui, He, Dannong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5680311/
https://www.ncbi.nlm.nih.gov/pubmed/29123191
http://dx.doi.org/10.1038/s41598-017-15556-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5680311/
https://www.ncbi.nlm.nih.gov/pubmed/29123191
http://dx.doi.org/10.1038/s41598-017-15556-6

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