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A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO(2)/Si structure
In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO(2)/Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO(2), which has a resistivity in the range of 50–80 Ω∙cm. The I–V curve obtained in dark...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5680311/ https://www.ncbi.nlm.nih.gov/pubmed/29123191 http://dx.doi.org/10.1038/s41598-017-15556-6 |