Spatially Resolved Thermometry of Resistive Memory Devices

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microsc...

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Detalles Bibliográficos
Autores principales: Yalon, Eilam, Deshmukh, Sanchit, Muñoz Rojo, Miguel, Lian, Feifei, Neumann, Christopher M., Xiong, Feng, Pop, Eric
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5681698/
https://www.ncbi.nlm.nih.gov/pubmed/29127371
http://dx.doi.org/10.1038/s41598-017-14498-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5681698/
https://www.ncbi.nlm.nih.gov/pubmed/29127371
http://dx.doi.org/10.1038/s41598-017-14498-3

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