Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors

The band gap properties of amorphous SiInZnO (a-SIZO) thin-film transistors (TFTs) with different Si concentrations have been studied. The electronic structures of the films, engineered by controlling the Si content, have been investigated through the changes of the band gap and band edge states. Ca...

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Detalles Bibliográficos
Autores principales: Choi, Jun Young, Heo, Keun, Cho, Kyung-Sang, Hwang, Sung Woo, Chung, JaeGwan, Kim, Sangsig, Lee, Byeong Hyeon, Lee, Sang Yeol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5684203/
https://www.ncbi.nlm.nih.gov/pubmed/29133806
http://dx.doi.org/10.1038/s41598-017-15331-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5684203/
https://www.ncbi.nlm.nih.gov/pubmed/29133806
http://dx.doi.org/10.1038/s41598-017-15331-7

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