Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

The aims of this study were to characterize reinforced metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low‐dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the t...

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Detalles Bibliográficos
Autores principales: Koivisto, Juha H., Wolff, Jan E., Kiljunen, Timo, Schulze, Dirk, Kortesniemi, Mika
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Radiation Measurements
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5690001/
https://www.ncbi.nlm.nih.gov/pubmed/26219008
http://dx.doi.org/10.1120/jacmp.v16i4.5433

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5690001/
https://www.ncbi.nlm.nih.gov/pubmed/26219008
http://dx.doi.org/10.1120/jacmp.v16i4.5433

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