Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates

Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Trilayer combinations with coincidence lattices with l...

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Detalles Bibliográficos
Autores principales: Matusalem, Filipe, Koda, Daniel S., Bechstedt, Friedhelm, Marques, Marcelo, Teles, Lara K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691050/
https://www.ncbi.nlm.nih.gov/pubmed/29146916
http://dx.doi.org/10.1038/s41598-017-15610-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691050/
https://www.ncbi.nlm.nih.gov/pubmed/29146916
http://dx.doi.org/10.1038/s41598-017-15610-3

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