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Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates
Growth of X-enes, such as silicene, germanene and stanene, requires passivated substrates to ensure the survival of their exotic properties. Using first-principles methods, we study as-grown graphene on polar SiC surfaces as suitable substrates. Trilayer combinations with coincidence lattices with l...
Autores principales: | Matusalem, Filipe, Koda, Daniel S., Bechstedt, Friedhelm, Marques, Marcelo, Teles, Lara K. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691050/ https://www.ncbi.nlm.nih.gov/pubmed/29146916 http://dx.doi.org/10.1038/s41598-017-15610-3 |
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