Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are ho...

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Detalles Bibliográficos
Autores principales: Chandrasekar, Hareesh, Bhat, K. N., Rangarajan, Muralidharan, Raghavan, Srinivasan, Bhat, Navakanta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691057/
https://www.ncbi.nlm.nih.gov/pubmed/29146979
http://dx.doi.org/10.1038/s41598-017-16114-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691057/
https://www.ncbi.nlm.nih.gov/pubmed/29146979
http://dx.doi.org/10.1038/s41598-017-16114-w

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