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Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of such a parasitic channel and its properties are ho...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691057/ https://www.ncbi.nlm.nih.gov/pubmed/29146979 http://dx.doi.org/10.1038/s41598-017-16114-w |