Nitrogen-related intermediate band in P-rich GaN(x)P(y)As(1−x−y) alloys

The electronic band structure of phosphorus-rich GaN(x)P(y)As(1−x−y) alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. It is shown that incorporation of a few percent of N atoms has a...

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Detalles Bibliográficos
Autores principales: Zelazna, K., Gladysiewicz, M., Polak, M. P., Almosni, S., Létoublon, A., Cornet, C., Durand, O., Walukiewicz, W., Kudrawiec, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691189/
https://www.ncbi.nlm.nih.gov/pubmed/29147023
http://dx.doi.org/10.1038/s41598-017-15933-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691189/
https://www.ncbi.nlm.nih.gov/pubmed/29147023
http://dx.doi.org/10.1038/s41598-017-15933-1

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