Cargando…
Nitrogen-related intermediate band in P-rich GaN(x)P(y)As(1−x−y) alloys
The electronic band structure of phosphorus-rich GaN(x)P(y)As(1−x−y) alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. It is shown that incorporation of a few percent of N atoms has a...
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5691189/ https://www.ncbi.nlm.nih.gov/pubmed/29147023 http://dx.doi.org/10.1038/s41598-017-15933-1 |