Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors

It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using s...

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Detalles Bibliográficos
Autores principales: Mergenthaler, K., Anttu, N., Vainorius, N., Aghaeipour, M., Lehmann, S., Borgström, M. T., Samuelson, L., Pistol, M.-E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5696368/
https://www.ncbi.nlm.nih.gov/pubmed/29158511
http://dx.doi.org/10.1038/s41467-017-01817-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5696368/
https://www.ncbi.nlm.nih.gov/pubmed/29158511
http://dx.doi.org/10.1038/s41467-017-01817-5

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