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Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors

It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using s...

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Autores principales: Mergenthaler, K., Anttu, N., Vainorius, N., Aghaeipour, M., Lehmann, S., Borgström, M. T., Samuelson, L., Pistol, M.-E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5696368/
https://www.ncbi.nlm.nih.gov/pubmed/29158511
http://dx.doi.org/10.1038/s41467-017-01817-5
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author Mergenthaler, K.
Anttu, N.
Vainorius, N.
Aghaeipour, M.
Lehmann, S.
Borgström, M. T.
Samuelson, L.
Pistol, M.-E.
author_facet Mergenthaler, K.
Anttu, N.
Vainorius, N.
Aghaeipour, M.
Lehmann, S.
Borgström, M. T.
Samuelson, L.
Pistol, M.-E.
author_sort Mergenthaler, K.
collection PubMed
description It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using standard photoluminescence techniques. It is important to know if this anti-Stokes photoluminescence also occurs in bulk semiconductors as well as its relation to carrier recombination and relaxation. Here we show that similar anti-Stokes photoluminescence can indeed be observed in degenerately doped bulk indium phosphide and gallium arsenide and is caused by minority carriers scattering to high momenta by phonons. We find in addition that the radiative electron-hole recombination is highly momentum-conserving and that photogenerated minority carriers recombine before relaxing to the band edge at low temperatures. These observations challenge the use of models assuming thermalization of minority carriers in the analysis of highly doped devices.
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spelling pubmed-56963682017-11-22 Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors Mergenthaler, K. Anttu, N. Vainorius, N. Aghaeipour, M. Lehmann, S. Borgström, M. T. Samuelson, L. Pistol, M.-E. Nat Commun Article It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using standard photoluminescence techniques. It is important to know if this anti-Stokes photoluminescence also occurs in bulk semiconductors as well as its relation to carrier recombination and relaxation. Here we show that similar anti-Stokes photoluminescence can indeed be observed in degenerately doped bulk indium phosphide and gallium arsenide and is caused by minority carriers scattering to high momenta by phonons. We find in addition that the radiative electron-hole recombination is highly momentum-conserving and that photogenerated minority carriers recombine before relaxing to the band edge at low temperatures. These observations challenge the use of models assuming thermalization of minority carriers in the analysis of highly doped devices. Nature Publishing Group UK 2017-11-21 /pmc/articles/PMC5696368/ /pubmed/29158511 http://dx.doi.org/10.1038/s41467-017-01817-5 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Mergenthaler, K.
Anttu, N.
Vainorius, N.
Aghaeipour, M.
Lehmann, S.
Borgström, M. T.
Samuelson, L.
Pistol, M.-E.
Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_full Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_fullStr Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_full_unstemmed Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_short Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_sort anti-stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5696368/
https://www.ncbi.nlm.nih.gov/pubmed/29158511
http://dx.doi.org/10.1038/s41467-017-01817-5
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