Low-temperature fabrication of an HfO(2) passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

We report low-temperature solution processing of hafnium oxide (HfO(2)) passivation layers for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl(4)) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO(2) film...

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Detalles Bibliográficos
Autores principales: Hong, Seonghwan, Park, Sung Pyo, Kim, Yeong-gyu, Kang, Byung Ha, Na, Jae Won, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5701140/
https://www.ncbi.nlm.nih.gov/pubmed/29176568
http://dx.doi.org/10.1038/s41598-017-16585-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5701140/
https://www.ncbi.nlm.nih.gov/pubmed/29176568
http://dx.doi.org/10.1038/s41598-017-16585-x

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