The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering

It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion c...

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Autores principales: Wiesner, M., Trzaskowska, A., Mroz, B., Charpentier, S., Wang, S., Song, Y., Lombardi, F., Lucignano, P., Benedek, G., Campi, D., Bernasconi, M., Guinea, F., Tagliacozzo, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5703879/
https://www.ncbi.nlm.nih.gov/pubmed/29180657
http://dx.doi.org/10.1038/s41598-017-16313-5
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author Wiesner, M.
Trzaskowska, A.
Mroz, B.
Charpentier, S.
Wang, S.
Song, Y.
Lombardi, F.
Lucignano, P.
Benedek, G.
Campi, D.
Bernasconi, M.
Guinea, F.
Tagliacozzo, A.
author_facet Wiesner, M.
Trzaskowska, A.
Mroz, B.
Charpentier, S.
Wang, S.
Song, Y.
Lombardi, F.
Lucignano, P.
Benedek, G.
Campi, D.
Bernasconi, M.
Guinea, F.
Tagliacozzo, A.
author_sort Wiesner, M.
collection PubMed
description It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi(2)Te(3) film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
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spelling pubmed-57038792017-11-30 The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering Wiesner, M. Trzaskowska, A. Mroz, B. Charpentier, S. Wang, S. Song, Y. Lombardi, F. Lucignano, P. Benedek, G. Campi, D. Bernasconi, M. Guinea, F. Tagliacozzo, A. Sci Rep Article It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi(2)Te(3) film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar. Nature Publishing Group UK 2017-11-27 /pmc/articles/PMC5703879/ /pubmed/29180657 http://dx.doi.org/10.1038/s41598-017-16313-5 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Wiesner, M.
Trzaskowska, A.
Mroz, B.
Charpentier, S.
Wang, S.
Song, Y.
Lombardi, F.
Lucignano, P.
Benedek, G.
Campi, D.
Bernasconi, M.
Guinea, F.
Tagliacozzo, A.
The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering
title The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering
title_full The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering
title_fullStr The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering
title_full_unstemmed The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering
title_short The electron-phonon interaction at deep Bi(2)Te(3)-semiconductor interfaces from Brillouin light scattering
title_sort electron-phonon interaction at deep bi(2)te(3)-semiconductor interfaces from brillouin light scattering
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5703879/
https://www.ncbi.nlm.nih.gov/pubmed/29180657
http://dx.doi.org/10.1038/s41598-017-16313-5
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