Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron mic...

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Detalles Bibliográficos
Autores principales: Ye, Chao, Ran, Guang, Zhou, Wei, Shen, Qiang, Feng, Qijie, Lin, Jianxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706178/
https://www.ncbi.nlm.nih.gov/pubmed/29068408
http://dx.doi.org/10.3390/ma10111231

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706178/
https://www.ncbi.nlm.nih.gov/pubmed/29068408
http://dx.doi.org/10.3390/ma10111231

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