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Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron mic...

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Autores principales: Ye, Chao, Ran, Guang, Zhou, Wei, Shen, Qiang, Feng, Qijie, Lin, Jianxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706178/
https://www.ncbi.nlm.nih.gov/pubmed/29068408
http://dx.doi.org/10.3390/ma10111231
_version_ 1783282172256321536
author Ye, Chao
Ran, Guang
Zhou, Wei
Shen, Qiang
Feng, Qijie
Lin, Jianxin
author_facet Ye, Chao
Ran, Guang
Zhou, Wei
Shen, Qiang
Feng, Qijie
Lin, Jianxin
author_sort Ye, Chao
collection PubMed
description Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.
format Online
Article
Text
id pubmed-5706178
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-57061782017-12-04 Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing Ye, Chao Ran, Guang Zhou, Wei Shen, Qiang Feng, Qijie Lin, Jianxin Materials (Basel) Article Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time. MDPI 2017-10-25 /pmc/articles/PMC5706178/ /pubmed/29068408 http://dx.doi.org/10.3390/ma10111231 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ye, Chao
Ran, Guang
Zhou, Wei
Shen, Qiang
Feng, Qijie
Lin, Jianxin
Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
title Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
title_full Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
title_fullStr Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
title_full_unstemmed Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
title_short Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
title_sort recrystallization-induced surface cracks of carbon ions irradiated 6h-sic after annealing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706178/
https://www.ncbi.nlm.nih.gov/pubmed/29068408
http://dx.doi.org/10.3390/ma10111231
work_keys_str_mv AT yechao recrystallizationinducedsurfacecracksofcarbonionsirradiated6hsicafterannealing
AT ranguang recrystallizationinducedsurfacecracksofcarbonionsirradiated6hsicafterannealing
AT zhouwei recrystallizationinducedsurfacecracksofcarbonionsirradiated6hsicafterannealing
AT shenqiang recrystallizationinducedsurfacecracksofcarbonionsirradiated6hsicafterannealing
AT fengqijie recrystallizationinducedsurfacecracksofcarbonionsirradiated6hsicafterannealing
AT linjianxin recrystallizationinducedsurfacecracksofcarbonionsirradiated6hsicafterannealing