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Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing
Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron mic...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706178/ https://www.ncbi.nlm.nih.gov/pubmed/29068408 http://dx.doi.org/10.3390/ma10111231 |