A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also...

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Detalles Bibliográficos
Autores principales: Wang, Lai, Jin, Jie, Mi, Chenziyi, Hao, Zhibiao, Luo, Yi, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Wang, Jian, Li, Hongtao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706180/
https://www.ncbi.nlm.nih.gov/pubmed/29072611
http://dx.doi.org/10.3390/ma10111233

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706180/
https://www.ncbi.nlm.nih.gov/pubmed/29072611
http://dx.doi.org/10.3390/ma10111233

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