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A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also...
Autores principales: | Wang, Lai, Jin, Jie, Mi, Chenziyi, Hao, Zhibiao, Luo, Yi, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Wang, Jian, Li, Hongtao |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706180/ https://www.ncbi.nlm.nih.gov/pubmed/29072611 http://dx.doi.org/10.3390/ma10111233 |
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