Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Ru, Tsai, Wan-Ting, Wu, Yung-Chun, Lin, Yu-Hsien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706223/
https://www.ncbi.nlm.nih.gov/pubmed/29112139
http://dx.doi.org/10.3390/ma10111276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706223/
https://www.ncbi.nlm.nih.gov/pubmed/29112139
http://dx.doi.org/10.3390/ma10111276

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