Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets

Two-dimensional A(III)B(VI) layered semiconductors have recently attracted great attention due to their potential applications in piezo-phototronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) of strained and unstrained GaSe flakes. It is found that, as the...

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Detalles Bibliográficos
Autores principales: Zhang, Duan, Jia, Tanhua, Dong, Ran, Chen, Dengyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706229/
https://www.ncbi.nlm.nih.gov/pubmed/29117124
http://dx.doi.org/10.3390/ma10111282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706229/
https://www.ncbi.nlm.nih.gov/pubmed/29117124
http://dx.doi.org/10.3390/ma10111282

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