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Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets
Two-dimensional A(III)B(VI) layered semiconductors have recently attracted great attention due to their potential applications in piezo-phototronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) of strained and unstrained GaSe flakes. It is found that, as the...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706229/ https://www.ncbi.nlm.nih.gov/pubmed/29117124 http://dx.doi.org/10.3390/ma10111282 |