Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Bi(0.8)Pr(0.2)Fe(0.95)Mn(0.05)O(3)/Bi(3.96)Gd(0.04)Ti(2.95)W(0.05)O(12) (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO(2)/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films ex...

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Detalles Bibliográficos
Autores principales: Kao, Ming-Cheng, Chen, Hone-Zern, Young, San-Lin, Chen, Kai-Huang, Chiang, Jung-Lung, Shi, Jen-Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706274/
https://www.ncbi.nlm.nih.gov/pubmed/29156636
http://dx.doi.org/10.3390/ma10111327

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706274/
https://www.ncbi.nlm.nih.gov/pubmed/29156636
http://dx.doi.org/10.3390/ma10111327

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