Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Bi(0.8)Pr(0.2)Fe(0.95)Mn(0.05)O(3)/Bi(3.96)Gd(0.04)Ti(2.95)W(0.05)O(12) (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO(2)/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films ex...

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Autores principales: Kao, Ming-Cheng, Chen, Hone-Zern, Young, San-Lin, Chen, Kai-Huang, Chiang, Jung-Lung, Shi, Jen-Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706274/
https://www.ncbi.nlm.nih.gov/pubmed/29156636
http://dx.doi.org/10.3390/ma10111327
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author Kao, Ming-Cheng
Chen, Hone-Zern
Young, San-Lin
Chen, Kai-Huang
Chiang, Jung-Lung
Shi, Jen-Bin
author_facet Kao, Ming-Cheng
Chen, Hone-Zern
Young, San-Lin
Chen, Kai-Huang
Chiang, Jung-Lung
Shi, Jen-Bin
author_sort Kao, Ming-Cheng
collection PubMed
description Bi(0.8)Pr(0.2)Fe(0.95)Mn(0.05)O(3)/Bi(3.96)Gd(0.04)Ti(2.95)W(0.05)O(12) (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO(2)/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm(3) and 62 μC/cm(2), respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS.
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spelling pubmed-57062742017-12-04 Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films Kao, Ming-Cheng Chen, Hone-Zern Young, San-Lin Chen, Kai-Huang Chiang, Jung-Lung Shi, Jen-Bin Materials (Basel) Article Bi(0.8)Pr(0.2)Fe(0.95)Mn(0.05)O(3)/Bi(3.96)Gd(0.04)Ti(2.95)W(0.05)O(12) (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO(2)/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm(3) and 62 μC/cm(2), respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS. MDPI 2017-11-20 /pmc/articles/PMC5706274/ /pubmed/29156636 http://dx.doi.org/10.3390/ma10111327 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kao, Ming-Cheng
Chen, Hone-Zern
Young, San-Lin
Chen, Kai-Huang
Chiang, Jung-Lung
Shi, Jen-Bin
Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
title Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
title_full Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
title_fullStr Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
title_full_unstemmed Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
title_short Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
title_sort structural, electrical, magnetic and resistive switching properties of the multiferroic/ferroelectric bilayer thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706274/
https://www.ncbi.nlm.nih.gov/pubmed/29156636
http://dx.doi.org/10.3390/ma10111327
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