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Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
Bi(0.8)Pr(0.2)Fe(0.95)Mn(0.05)O(3)/Bi(3.96)Gd(0.04)Ti(2.95)W(0.05)O(12) (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO(2)/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films ex...
Autores principales: | Kao, Ming-Cheng, Chen, Hone-Zern, Young, San-Lin, Chen, Kai-Huang, Chiang, Jung-Lung, Shi, Jen-Bin |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5706274/ https://www.ncbi.nlm.nih.gov/pubmed/29156636 http://dx.doi.org/10.3390/ma10111327 |
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