Resistive Switching of Sub-10 nm TiO(2) Nanoparticle Self-Assembled Monolayers

Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS)...

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Detalles Bibliográficos
Autores principales: Schmidt, Dirk Oliver, Raab, Nicolas, Noyong, Michael, Santhanam, Venugopal, Dittmann, Regina, Simon, Ulrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5707587/
https://www.ncbi.nlm.nih.gov/pubmed/29113050
http://dx.doi.org/10.3390/nano7110370

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5707587/
https://www.ncbi.nlm.nih.gov/pubmed/29113050
http://dx.doi.org/10.3390/nano7110370

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