Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF(4)-Plasma-Treated Blocking Oxide Layer

Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF(4) plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineer...

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Detalles Bibliográficos
Autores principales: Liu, Yu-Hua, Kao, Chyuan-Haur, Cheng, Tsung-Chin, Wu, Chih-I, Wang, Jer-Chyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5707602/
https://www.ncbi.nlm.nih.gov/pubmed/29125567
http://dx.doi.org/10.3390/nano7110385

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5707602/
https://www.ncbi.nlm.nih.gov/pubmed/29125567
http://dx.doi.org/10.3390/nano7110385

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