Optical charge state control of spin defects in 4H-SiC

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stabili...

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Detalles Bibliográficos
Autores principales: Wolfowicz, Gary, Anderson, Christopher P., Yeats, Andrew L., Whiteley, Samuel J., Niklas, Jens, Poluektov, Oleg G., Heremans, F. Joseph, Awschalom, David D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5709515/
https://www.ncbi.nlm.nih.gov/pubmed/29192288
http://dx.doi.org/10.1038/s41467-017-01993-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5709515/
https://www.ncbi.nlm.nih.gov/pubmed/29192288
http://dx.doi.org/10.1038/s41467-017-01993-4

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