Thermally nucleated magnetic reversal in CoFeB/MgO nanodots

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for reducing the power consumption given its non-volatile natur...

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Detalles Bibliográficos
Autores principales: Meo, Andrea, Chureemart, Phanwadee, Wang, Shuxia, Chepulskyy, Roman, Apalkov, Dmytro, Chantrell, Roy W., Evans, Richard F. L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711886/
https://www.ncbi.nlm.nih.gov/pubmed/29196700
http://dx.doi.org/10.1038/s41598-017-16911-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711886/
https://www.ncbi.nlm.nih.gov/pubmed/29196700
http://dx.doi.org/10.1038/s41598-017-16911-3

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