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Thermally nucleated magnetic reversal in CoFeB/MgO nanodots
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for reducing the power consumption given its non-volatile natur...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711886/ https://www.ncbi.nlm.nih.gov/pubmed/29196700 http://dx.doi.org/10.1038/s41598-017-16911-3 |
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author | Meo, Andrea Chureemart, Phanwadee Wang, Shuxia Chepulskyy, Roman Apalkov, Dmytro Chantrell, Roy W. Evans, Richard F. L. |
author_facet | Meo, Andrea Chureemart, Phanwadee Wang, Shuxia Chepulskyy, Roman Apalkov, Dmytro Chantrell, Roy W. Evans, Richard F. L. |
author_sort | Meo, Andrea |
collection | PubMed |
description | Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for reducing the power consumption given its non-volatile nature while achieving high performance. The dynamic properties and switching mechanisms of MTJs are critical to understanding device operation and to enable scaling of devices below 30 nm in diameter. Here we show that the magnetic reversal mechanism is incoherent and that the switching is thermally nucleated at device operating temperatures. Moreover, we find an intrinsic thermal switching field distribution arising on the sub-nanosecond time-scale even in the absence of size and anisotropy distributions or material defects. These features represent the characteristic signature of the dynamic properties in MTJs and give an intrinsic limit to reversal reliability in small magnetic nanodevices. |
format | Online Article Text |
id | pubmed-5711886 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-57118862017-12-06 Thermally nucleated magnetic reversal in CoFeB/MgO nanodots Meo, Andrea Chureemart, Phanwadee Wang, Shuxia Chepulskyy, Roman Apalkov, Dmytro Chantrell, Roy W. Evans, Richard F. L. Sci Rep Article Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for reducing the power consumption given its non-volatile nature while achieving high performance. The dynamic properties and switching mechanisms of MTJs are critical to understanding device operation and to enable scaling of devices below 30 nm in diameter. Here we show that the magnetic reversal mechanism is incoherent and that the switching is thermally nucleated at device operating temperatures. Moreover, we find an intrinsic thermal switching field distribution arising on the sub-nanosecond time-scale even in the absence of size and anisotropy distributions or material defects. These features represent the characteristic signature of the dynamic properties in MTJs and give an intrinsic limit to reversal reliability in small magnetic nanodevices. Nature Publishing Group UK 2017-12-01 /pmc/articles/PMC5711886/ /pubmed/29196700 http://dx.doi.org/10.1038/s41598-017-16911-3 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Meo, Andrea Chureemart, Phanwadee Wang, Shuxia Chepulskyy, Roman Apalkov, Dmytro Chantrell, Roy W. Evans, Richard F. L. Thermally nucleated magnetic reversal in CoFeB/MgO nanodots |
title | Thermally nucleated magnetic reversal in CoFeB/MgO nanodots |
title_full | Thermally nucleated magnetic reversal in CoFeB/MgO nanodots |
title_fullStr | Thermally nucleated magnetic reversal in CoFeB/MgO nanodots |
title_full_unstemmed | Thermally nucleated magnetic reversal in CoFeB/MgO nanodots |
title_short | Thermally nucleated magnetic reversal in CoFeB/MgO nanodots |
title_sort | thermally nucleated magnetic reversal in cofeb/mgo nanodots |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5711886/ https://www.ncbi.nlm.nih.gov/pubmed/29196700 http://dx.doi.org/10.1038/s41598-017-16911-3 |
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