Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data

The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL) of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue i...

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Detalles Bibliográficos
Autores principales: Liu, Zhen, Mei, Wenjuan, Zeng, Xianping, Yang, Chenglin, Zhou, Xiuyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5712987/
https://www.ncbi.nlm.nih.gov/pubmed/29099811
http://dx.doi.org/10.3390/s17112524

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5712987/
https://www.ncbi.nlm.nih.gov/pubmed/29099811
http://dx.doi.org/10.3390/s17112524

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