Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance

In this work, we demonstrate for the first time an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGe(x) contacts formed by rapid thermal annealing (RTA). The on-state current of the transistor can be significantly improved and the I(ON)/I(OFF) ratio increase...

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Detalles Bibliográficos
Autores principales: Chang, Hsun-Ming, Charnas, Adam, Lin, Yu-Ming, Ye, Peide D., Wu, Chih-I, Wu, Chao-Hsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5714961/
https://www.ncbi.nlm.nih.gov/pubmed/29203831
http://dx.doi.org/10.1038/s41598-017-16845-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5714961/
https://www.ncbi.nlm.nih.gov/pubmed/29203831
http://dx.doi.org/10.1038/s41598-017-16845-w

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