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Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5714999/ https://www.ncbi.nlm.nih.gov/pubmed/29203820 http://dx.doi.org/10.1038/s41598-017-17290-5 |