Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors

Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to...

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Autores principales: Li, Hongfei, Guo, Yuzheng, Robertson, John
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5714999/
https://www.ncbi.nlm.nih.gov/pubmed/29203820
http://dx.doi.org/10.1038/s41598-017-17290-5
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author Li, Hongfei
Guo, Yuzheng
Robertson, John
author_facet Li, Hongfei
Guo, Yuzheng
Robertson, John
author_sort Li, Hongfei
collection PubMed
description Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO).
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spelling pubmed-57149992017-12-08 Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors Li, Hongfei Guo, Yuzheng Robertson, John Sci Rep Article Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO). Nature Publishing Group UK 2017-12-04 /pmc/articles/PMC5714999/ /pubmed/29203820 http://dx.doi.org/10.1038/s41598-017-17290-5 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Li, Hongfei
Guo, Yuzheng
Robertson, John
Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_full Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_fullStr Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_full_unstemmed Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_short Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
title_sort hydrogen and the light-induced bias instability mechanism in amorphous oxide semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5714999/
https://www.ncbi.nlm.nih.gov/pubmed/29203820
http://dx.doi.org/10.1038/s41598-017-17290-5
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AT robertsonjohn hydrogenandthelightinducedbiasinstabilitymechanisminamorphousoxidesemiconductors

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